| 摘要 |
<p>A pattern forming method, includes: (i) a step of forming a resist film from a resist composition for organic solvent-based development, the resist composition containing (A) a resin capable of increasing a polarity by an action of an acid to decrease a solubility in an organic solvent-containing developer and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) an exposure step; (iii) a development step using an organic solvent-containing developer; and (iv) a washing step using a rinsing solution, wherein in the step (iv), a rinsing solution containing at least either the solvent S1 or S2 as defined in the specification is used.</p> |
