发明名称 |
CMOS TRANSISTOR, SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR, AND SEMICONDUCTOR MODULE INCLUDING THE DEVICE |
摘要 |
Provided are a CMOS transistor, a semiconductor device having the transistor, and a semiconductor module having the device. The CMOS transistor may include first and second interconnection structures respectively disposed in first and second regions of a semiconductor substrate. The first and second regions of the semiconductor substrate may have different conductivity types. The first and second interconnection structures may be disposed on the semiconductor substrate. The first interconnection structure may have a different stacked structure from the second interconnection structure. The CMOS transistor may be disposed in the semiconductor device. The semiconductor device may be disposed in the semiconductor module.
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申请公布号 |
US2011180879(A1) |
申请公布日期 |
2011.07.28 |
申请号 |
US20100972961 |
申请日期 |
2010.12.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE HYE-LAN;PARK HONG-BAE;HYUN SANG-JIN;SHIN YU-GYUN;HONG SUG-HUN;NA HOON-JOO;HONG HYUNG-SEOK |
分类号 |
H01L23/522;H01L27/092 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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