发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
A method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a TiN film that is higher in quality than a TiN film formed by a conventional CVD method at a higher film-forming rate, that is, with a higher productivity than a TiN film formed by an ALD method. The method includes steps of: (a) loading a substrate into a processing chamber; (b) forming a predetermined film on the substrate by simultaneously supplying the first processing gas and the second processing gas into the processing chamber; (c) stopping the supply of the first processing gas and the second processing gas and removing the first processing gas and the second processing gas remaining in the processing chamber; (d) modifying the film formed on the substrate by supplying the second processing gas into the processing chamber after the step (c); and (e) unloading the substrate from the processing chamber, wherein, in the step (b), a time period for supplying the second processing gas into the processing chamber is longer than a time period for supplying the first processing gas into the processing chamber. |
申请公布号 |
US2011183519(A1) |
申请公布日期 |
2011.07.28 |
申请号 |
US201113012320 |
申请日期 |
2011.01.24 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
KAGA YUKINAO;SAITO TATSUYUKI;SAKAI MASANORI;YOKOGAWA TAKASHI |
分类号 |
H01L21/3205;C23C16/455;C23C16/52 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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