| 摘要 |
Embodiments of the invention provide an integrated circuit for an embedded dynamic random access memory (eDRAM), a semiconductor-on-insulator (SOI) wafer in which such an integrated circuit may be formed, and a method of forming an eDRAM in such an SOI wafer. One embodiment of the invention provides an integrated circuit for an embedded dynamic random access memory (eDRAM) comprising: a semiconductor-on-insulator (SOI) wafer including: an n-type substrate; an insulator layer atop the n-type substrate; and an active semiconductor layer atop the insulator layer; a plurality of deep trenches, each extending from a surface of the active semiconductor layer into the n-type substrate; a dielectric liner along a surface of each of the plurality of deep trenches; and an n-type conductor within each of the plurality of deep trenches, the dielectric liner separating the n-type conductor from the n-type substrate; wherein the n-type substrate, the dielectric liner, and the n-type conductor form a buried plate, a node dielectric, and a node plate, respectively, of a cell capacitor. |
