| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a bonded wafer, capable of obtaining the bonded wafer having a thin film satisfactory in film thickness uniformity, even when heat treatment is performed for planarizing the thin-film surface of the bonded wafer after peeling, in an ion implantation peeling method. <P>SOLUTION: In the method of manufacturing a bonded wafer which executes heat treatment for planarizing the surface of a thin film, in an atmosphere containing hydrogen or hydrogen chloride to the bonded wafer manufactured by the ion implantation peeling method, the surface of a susceptor for mounting the bonded wafer to be used in planarization heat treatment is coated with a silicon film beforehand. <P>COPYRIGHT: (C)2011,JPO&INPIT |
