发明名称 High Pressure Apparatus and Method for Nitride Crystal Growth
摘要 An improved high pressure apparatus and methods for processing supercritical fluids is described. The apparatus includes a capsule, a heater, and at least one ceramic ring contained by a metal sleeve. The apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C.
申请公布号 US2011183498(A1) 申请公布日期 2011.07.28
申请号 US201113013697 申请日期 2011.01.25
申请人 SORAA, INC. 发明人 D'EVELYN MARK P.
分类号 H01L21/20;C30B7/02;C30B7/08 主分类号 H01L21/20
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