发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To prevent disconnections and short-circuits in a power feeding area for heating a catalyst when activating a treatment gas by means of the heated catalyst, and then conducting treatment with respect to a substrate by using an active species formed from the treatment gas. SOLUTION: A plarity of rod-like ceramic heaters 31 are disposed and secured to a top plate of a treatment vessel 1 in an island configuration so as to be opposed to a wafer W, and a metal catalyst layer 44 is provided at the lower end of each ceramic heater 31 so as to face gas discharge holes 13 in a gas diffuser plate 11, and the metal catalyst layer 44 is indirectly heated by the ceramic heaters 31 (resistance heating wires 42), thereby activating the treatment gas. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011146543(A) 申请公布日期 2011.07.28
申请号 JP20100006270 申请日期 2010.01.14
申请人 TOKYO ELECTRON LTD 发明人 GUNJI ISAO
分类号 H01L21/205;C23C16/44 主分类号 H01L21/205
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