| 摘要 |
A magnetic random access memory includes the following structure. A first magnetoresistive effect element is formed on a semiconductor substrate. The first magnetoresistive effect element includes a first fixed layer, a first nonmagnetic layer and a first free layer. The first fixed layer has an invariable magnetization direction. The first nonmagnetic layer is formed on the first fixed layer. The first free layer is formed on the first nonmagnetic layer and has a variable magnetization direction. An active region is formed on the substrate. A first select transistor includes a first diffusion region and a second diffusion region which are formed in the active region. The first diffusion region is electrically connected to the first free layer. A second select transistor includes the first diffusion region and a third diffusion region which are formed in the active region. A first interconnect layer is electrically connected to the first fixed layer.
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