| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a buffer layer for a photoelectric element such that a CdS buffer layer having excellent characteristics can be formed on a light absorption layer of a CZTS-based semiconductor, a CIGS-based semiconductor, etc., a method of manufacturing the same, and the photoelectric element having the buffer layer obtained by such a method. <P>SOLUTION: The present invention relates to the method of manufacturing the buffer layer for the photoelectric element including a CBD process of forming a CdS film on the surface of the light absorption layer by dipping a substrate having the light absorption layer formed in a CBD solution containing cadmium salt, a sulfur source, and a sulfide synthesizing auxiliary agent, and a heat treatment process of subjecting the CdS film to a heat treatment in an oxidizing atmosphere at a temperature higher than 200°C and equal to or lower than 350°C; the buffer layer for the photoelectric element obtained by the method; and the photoelectric element having the buffer layer obtained by the method. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
