发明名称 TANTALUM SPUTTERING TARGET
摘要 PROBLEM TO BE SOLVED: To provide a high-purity tantalum sputtering target which has a uniform and fine structure, provides stable plasma and has excellent film uniformity. SOLUTION: The tantalum sputtering target contains 1-100 ppm by mass (inclusive) of molybdenum as an essential component and has purity of≥99.998% when molybdenum and gas components are excluded. Also, there is provided the tantalum sputtering target which additionally contains 0-100 ppm by mass (excluding 0 ppm by mass) of niobium and has a purity of≥99.998% when molybdenum, niobium and gas components are excluded. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011144454(A) 申请公布日期 2011.07.28
申请号 JP20110026806 申请日期 2011.02.10
申请人 JX NIPPON MINING & METALS CORP 发明人 FUKUSHIMA ATSUSHI;ODA KUNIHIRO;SENDA SHINICHIRO
分类号 C23C14/34;C22C27/02 主分类号 C23C14/34
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