LIGHT EMITTING DIODE HAVING NANO STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
摘要
PURPOSE: A light emitting diode of a nano structure and a manufacturing method thereof are provided to form a nano structure in a p-electrode to guide light upward, thereby increasing light emitting efficiency without lowering reliability. CONSTITUTION: A light emitting structure is formed on a substrate(100). The light emitting structure comprises a first semiconductor layer(121), an active layer(122), and a second semiconductor layer(123). A first electrode(142) is formed on the first semiconductor layer. A second electrode(141) is formed on the second semiconductor layer. A first nano structure(153) is formed in a first trench(115) which is located on the first semiconductor layer.
申请公布号
KR20110086353(A)
申请公布日期
2011.07.28
申请号
KR20100006035
申请日期
2010.01.22
申请人
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YEUNGNAM UNIVERSITY
发明人
OH, JI WON;PARK, IL KYU;JANG, JA SOON;JANG, SUN HO;KIM, SE MIN