| 发明名称 |
SELF-SELECTING PCM DEVICE NOT REQUIRING A DEDICATED SELECTOR TRANSISTOR |
| 摘要 |
<p>SELF-SELECTING PCM DEVICE NOT REQUIRING A DEDICATEDSELECTOR TRANSISTORA Zinc Oxide (ZnO) layer deposited using Atomic Layer Deposition (ALD)over a phase-change material forms a self-selected storage device. The diodeformed at the ZnO/GST interface shows both rectification and storagecapabilities within the PCM architecture.Figure 3</p> |
| 申请公布号 |
SG172525(A1) |
申请公布日期 |
2011.07.28 |
| 申请号 |
SG20100074979 |
申请日期 |
2010.10.13 |
| 申请人 |
NUMONYX B.V. |
发明人 |
REDAELLI, ANDREA;PIROVANO, AGOSTINO |
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