| 摘要 |
<p>BARRIER FILM FOR SEMICONDUCTOR WIRING, SINTERED COMPACT SPUTTERING TARGET AND METHOD OF PRODUCING THE SPUTTERING TARGETProvided are a barrier film for a semiconductor wiring containing Ni with its remainder being W and unavoidable impurities and having a composition of /AixMy (70 S x S 90, 10 S y.4.41. 30 unit: atomic percent): and a sintered compact sputtering target for forming a barrier film for a semiconductor wiring containing Ni with its remainder being W and unavoidable impurities and having a composition of tiVxNly (70 Si x S 90, 10 5 y 5 30, unit: atomic percent), and comprising a target structure configured from a W matrix and Ni particles existing therein and in10 which W is diffused in the Ni particles: The present invention aims to provide a sputtering target that is particularly effective for use in forming a barrier film in which the target itself has the same composition as the barrier film without depending on the nitriding reaction in the sputtering process, which is capable of effectively preventing the reaction of a semiconductor device, which is free from the generation of particles in the sputtering process, and which yields superior characteristics upon forming the barrier film, as well as a method of producing such a target.Hg. 1</p> |
