| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the following problem: a dopant is diffused to an outside of a buried epitaxial layer due to high temperature treatment for a long period of time in epitaxial growth, wherein the problem becomes clear by examining various trench filling epitaxial processes for filling a P-column region in a trench filling method as a method for introducing a super junction structure concerning a drift region etc. of a power MOSFET etc. <P>SOLUTION: In a silicon-based power semiconductor device having a super junction structure where an N-type column and a P-type column are repeated alternately, an element having a boron diffusion-suppressing effect is added to the P-type column. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
