| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an apparatus and method for growing a single crystal by which conditions for growing a single crystal stably are obtained even in the case that melting points, diameters or the like of materials to be grown are different, and thereby, a high quality single crystal having a desired diameter is grown, the fluctuation of heating intensity distribution is reduced, and crystal growth is easily carried out. <P>SOLUTION: In the apparatus for growing a single crystal, which has a raw material rod 14 supported by an upper crystal driving shaft 8, a seed crystal rod 16 supported by a lower crystal driving shaft 12 and a heating means, and grows the single crystal by forming a melting zone 18 by heating a contact part between the raw material rod 14 and the seed crystal rod 16 by the heating means, the heating means is constituted of a plurality of rectangular lasers 2a...2e each emitting a laser light having the same irradiation intensity and an optical means and arranged in the circumferential direction of the melting zone 18. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
