| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group-III nitride semiconductor light-emitting element having a structure that makes long-wavelength light emission easy and allows easy production. <P>SOLUTION: The group-III nitride semiconductor light-emitting element has a third surface 13e provided between a first surface 13c and a second surface 13d, on a principal surface 13a of a gallium nitride support base 13. The first and second surfaces 13c and 13d are tilted toward a reverse surface 13b with respect to the third surface 13e. The third surface 13e faces a direction of a <000-1> axis of the gallium nitride support base 13. First and second electrodes 17 and 19 are positioned on group-III nitride semiconductor layers 15c and 15d in a semiconductor region 15, and group-III nitride laminates 15c and 15d are formed on the first and second surfaces 13c and 13d respectively. The semiconductor region 15 includes a first conductivity type semiconductor layer 23, an active layer 25, and a second conductivity type semiconductor layer 27. Angles ALPHA1 and ALPHA2 range from +56° to <+80°. <P>COPYRIGHT: (C)2011,JPO&INPIT |
