| 摘要 |
PROBLEM TO BE SOLVED: To accurately form an n-type high-concentration impurity region doped with only n-type impurities and an n-type low-concentration impurity region doped with n-type impurities and p-type impurities, by self-alignment when forming the n-type high-concentration impurity region and the p-type low-concentration impurity region on a semiconductor substrate adjacently to each other. SOLUTION: An opening first film is formed on a region forming a charge storage part of a substrate 301, and the substrate is doped with n-type impurities through an opening by using the first film as a mask. Next, a fourth film (second film) 313 and a resist film 314 are formed on the substrate 301, and the substrate 301 is doped with p-type impurities through the fourth film (second film) 313 formed on an opening bottom except a part formed on an opening side wall by using the films 313 and 314 as a mask. Thus an n-type impurity region is formed wherein an n-type high-concentration impurity region 336 doped with only n-type impurities on the substrate 301 and an n-type low-concentration impurity region 337 doped with n-type impurities and p-type impurities on the substrate 301 are adjacent to each other. COPYRIGHT: (C)2011,JPO&INPIT
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