| 摘要 |
PURPOSE: A nitride semiconductor device and a manufacturing method thereof are provided to improve electrical and optical characteristics by suppressing a growth of a stacking fault in a nitride growth process. CONSTITUTION: A nitride semiconductor device includes a substrate, an intermediate layer, The intermediate layer is formed with a nitride layer. The intermediate layer is formed by the nitride layer and a material having the same quality as the nitride and a different phase. The intermediate layer is formed by a stacking fault. The stacking fault is operated as a barrier which prevents the propagation of the defects of the nitride.
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