发明名称 A METHOD OF PRODUCING A LAYER OF CAVITIES
摘要 Title : A METHOD OF PRODUCING A LAYER OF CAVITIES.Abstract: A method of producing a layer of cavities in a structure (100) comprises at least one substrate (101) formed from a materi al that can be oxidized or nitrided, the method comprising the following steps: implanting ions (10) into said substrate (101) in order to form an implanted ion concentration zone (102) at a predetermined mean depth; heat treating the implanted substrate to form a layer of cavities (103) at the implanted ion concentration zone (102); and forming an insulating layer (105) in said substrate by thermochemical treatment from one surface of said substrate, said insulat ing layer that is formed extending at least par tially into the layer of cavities (103).
申请公布号 SG172335(A1) 申请公布日期 2011.07.28
申请号 SG20110045937 申请日期 2010.02.01
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 LANDRU, DIDIER
分类号 主分类号
代理机构 代理人
主权项
地址