| 摘要 |
SILICON WAFER AND PRODUCTION METHOD THEREFORA silicon wafer including BMD with a diagonal length of from 10 nm to 50 nm, wherein, a density of the BMD which exists at a position of a depth of equal to or deeper than 50 µm from the surface of said silicon wafer is equal to or higher than 1x10[err]/cm³, and a ratio of the{111} plane in total planes surrounding BMD, as morphology of the BMD, is equal to or lower than 0.3.Figure 8
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