| 摘要 |
SILICON WAFER AND METHOD FOR PRODUCING THE SAMEThere is provided a silicon wafer composed of a silicon crys tal having excellent GOI characteristics of an oxide film and high C-mode pass rate. In addition, a method for producing the silicon wafer is provided.The silicon wafer is doped with nitrogen, hydrogen and car bon, and comprises:a plurality of voids, wherein a number of voids which is equal to or more than 50% of the total number of voids com pose bubble-like shaped aggregates of voids;a V1 region having a void density of over 2x10[err]/cm³ and below 1x10[err]/cm³ which occupies equal to or less than 20% of the to tal area of said silicon wafer;a V2 region having a void density of 5x10² to 2x10[err]/cm³ which occupies equal to or more than 80% of the total area of said silicon wafer; anda bulk micro defect density which is equal to or higher than 5x10[err]/cm³. Fig. 9
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