| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting device that facilitates increasing film thickness by a new method different from that of a conventional technique, operable at low driving voltage, low in power consumption, high in color purity and high in a yield. <P>SOLUTION: This light emitting device of a structure wherein a layer 312 containing a hole transporting material, a layer 313 containing a luminescent material, a layer 303 containing an n-type semiconductor and a layer 304 containing an organic compound and a material high in electron recipience are sequentially formed between an anode 301 and a cathode 305 in a direction from the anode 301 to the cathode 305, and the layer 304 containing the organic compound and the material high in electron recipience contacts the cathode 305 is manufactured. The layer 312 containing the hole transporting material is formed using a mixture of the organic compound showing a hole transporting property and molybdenum oxide. <P>COPYRIGHT: (C)2011,JPO&INPIT |
