发明名称 HYDROGEN ANNEALING TREATMENT METHOD AND HYDROGEN ANNEALING TREATMENT DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To allow pressure-reduced hydrogen annealing treatment to be safely performed. <P>SOLUTION: A hydrogen annealing treatment device includes: a reaction chamber 2; a hydrogen gas introduction line 18 for introducing hydrogen gas into the reaction chamber; a pressure reducing exhaust line 5 connected to the reaction chamber; an exhauster which is provided in the pressure reducing exhaust line and reduces pressure in the reaction chamber; and an exhaust dilution line 48 which provides an inert gas to the downstream side of the exhauster to dilute a hydrogen concentration in exhaust gas to a predetermined value or lower. Safe pressure-reduced hydrogen anneal treatment is achieved by a hydrogen annealing treatment method including steps of: subjecting a target substrate to be treated, to pressure-reduced annealing treatment while introducing hydrogen gas from the hydrogen gas introduction line into the reaction chamber wherein pressure is reduced, and sucking and exhausting residual gas in the reaction chamber after the pressure-reduced annealing treatment, to the downstream side of the exhauster via the pressure reducing exhaust line by the exhauster; and supplying the inert gas from the exhaust dilution line 48 to the downstream side of the exhauster to dilute the hydrogen concentration in the residual gas to a predetermined value or lower. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011146704(A) 申请公布日期 2011.07.28
申请号 JP20110002580 申请日期 2011.01.08
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TAKAKUWA YASUNORI;TOMEZUKA KOJI
分类号 H01L21/324;F27D7/06 主分类号 H01L21/324
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