发明名称 MULTIPLE TARGET SPUTTERING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a multiple target sputtering apparatus which allows successive film formation with a plurality of targets while maintaining the atmosphere in a vacuum chamber, has a simple structure, and is excellent in reducing size and cost. SOLUTION: The apparatus includes: a rotating plate 32 which is a conductive plate arranged under a substrate 20 arranged in a vacuum chamber 12, wherein the rotating plate is approximately horizontally and rotatably supported and has a plurality of through-holes opened along the circumference at a constant distance from the center of rotation; a target support part 40 which is provided in the rotating plate and approximately horizontally supports a target plate 23 approximately under the through-holes; a backing plate which is a conductive plate provided in the target support part and abutting on the back side of the target plate, wherein the backing plate is insulated from the rotating plate; a target electrode 70 which sets the target plate to a predetermined potential through the backing plate; and an ascending and descending part 80 for ascending and descending the target electrode. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011144434(A) 申请公布日期 2011.07.28
申请号 JP20100007609 申请日期 2010.01.16
申请人 INSTITUTE OF NATIONAL COLLEGES OF TECHNOLOGY JAPAN 发明人 KIBA SHINICHIRO
分类号 C23C14/34 主分类号 C23C14/34
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