发明名称 Power controlling integrated circuit and retention switching circuit
摘要 A power control integrated circuit is provided having a voltage switching device and a retention switching device that has an input from an overdrive voltage supply such that in a retention enabled configuration a retention switching device is switched on more strongly relative to being both coupled to and driven from the voltage supply input signal associated with the voltage switching device. An overdriven retention switching device is provided as a separate entity from the voltage switching device itself and a computer readable storage medium is provided storing a data structure comprising a standard cell circuit definition for use in generating validating the circuit layout of a circuit cell of an integrated circuit. The circuit cell comprising an overdriven retention switching device. A further data structure corresponding to a standard cell is provided comprising an overdriven retention switching device and a voltage switching device and yet a further standard cell data structure is provided comprising an overdriven voltage switching device.
申请公布号 US2011181343(A1) 申请公布日期 2011.07.28
申请号 US20100926498 申请日期 2010.11.22
申请人 ARM LIMITED 发明人 MYERS JAMES EDWARD;FLYNN DAVID WALTER;BIGGS JOHN PHILIP
分类号 H03K17/687;G06F17/50;H03K17/00 主分类号 H03K17/687
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