HIGH-DIELECTRIC FILM

摘要

Provided is a high-dielectric film containing a film forming resin (A) and an inorganic particle (B), wherein the film forming resin (A) contains a vinylidene fluorine resin (a1), 0.01 parts by mass or more and less than 10 parts by mass of the inorganic particle (B) is contained per 100 parts by mass of the film forming resin (A), and the inorganic particle (B) is selected from at least one of the following: particles or composite particles of an inorganic oxide (B1) of one metal element selected from groups 2, 3, 4, 12, or 13 of the periodic table; inorganic composite oxide particles (B2) represented by the formula (1) M1 a1Nb1Oc1 (in the formula, M1 represents a group 2 metal element, N represents a group 4 metal element, a1 represents a number between 0.9 and 1.1, b1 represents a number between 0.9 and 1.1, c1 represents a number between 2.8 and 3.2, and there may be multiple M1s and Ns); and inorganic compound oxide particles (B3) comprising silicon oxide and an oxide of a metal element selected from groups 2, 3, 4, 12, or 13 of the periodic table. The volume resistivity in the abovementioned film is improved while the high relative permittivity of the VdF resin is maintained.