| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an apparatus for producing a silicon carbide single crystal, which allows the production of a silicon carbide single crystal having an enlarged diameter without deteriorating the quality of the silicon carbide single crystal. <P>SOLUTION: The apparatus 1 for producing a silicon carbide single crystal includes a crucible 2 which accommodates a seed crystal 11 containing silicon carbide and a raw material 10 for sublimation, arranged on the side opposite to the seed crystal 11 and used for the growth of the seed crystal 11. The crucible 2 is equipped with a crucible body 7 in which the raw material 10 for sublimation is accommodated and a cap body 8 to which the seed crystal 11 is attached. The thickness T1 in the central area of the cap body 8 corresponding to the central side in the radial direction of the seed crystal 11 is set to be larger than the thickness T2 of the cap body 8 in the peripheral area corresponding to the outside in the radial direction of the central side in the radial direction of the seed crystal 11. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
