发明名称 PHASE TRANSITION DEVICES AND SMART CAPACITIVE DEVICES
摘要 Phase transition devices may include a functional layer made of functional material that can undergo a change in conductance in response to an external stimulus such as an electric or magnetic or optical field, or heat. The functional material transitions between a conducting state and a non-conducting state, upon application of the external stimulus. A capacitive device may include a functional layer between a top electrode and a bottom electrode, and a dielectric layer between the functional layer and the top electrode. A three terminal phase transition switch may include a functional layer, for example a conductive oxide channel, deposited between a source and a drain, and a gate dielectric layer and a gate electrode deposited on the functional layer. An array of phase transition switches and/or capacitive devices may be formed on a substrate, which may be made of inexpensive flexible material.
申请公布号 US2011181345(A1) 申请公布日期 2011.07.28
申请号 US200913056982 申请日期 2009.08.02
申请人 PRESIDENT AND FELLOWS OF HARVARD COLLEGE 发明人 RAMANATHAN SHRIRAM
分类号 H01L45/00;H01L21/36;H03K17/56 主分类号 H01L45/00
代理机构 代理人
主权项
地址