发明名称 GAS BARRIER FILM, METHOD OF MANUFACTURING THE SAME AND ORGANIC PHOTOELECTRIC CONVERSION ELEMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a gas barrier film excellent in high barrier performance, bending resistance, smoothness, and production suitability, a method of manufacturing the same, and an organic photoelectric conversion element using the same. <P>SOLUTION: In the gas barrier film having a gas barrier layer containing silicon and oxygen at least at one side of a substrate, when the hardness of a substrate surface side (B surface) of the gas barrier layer measured by a nano-indentation method is represented by H1, and the hardness of the opposite surface side (surface A) is represented by H2, the gas barrier film has the hardness ratio (H2/H1) of 1.5 or more to 10.0 or lower and the hardness H2 of the surface A of 2.0 GPa or higher. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011143551(A) 申请公布日期 2011.07.28
申请号 JP20100003780 申请日期 2010.01.12
申请人 KONICA MINOLTA HOLDINGS INC 发明人 KUDO SHINJI
分类号 B32B9/00;B32B27/00;C08J7/04;C09D183/16;H01L51/42 主分类号 B32B9/00
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