In-Ga-O-BASED OXIDE SINTERED BODY, TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND METHODS OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an oxide sintered body with which an oxide semiconductor thin film can be stably obtained with good reproducibility by suppressing an abnormal discharge generated when the oxide semiconductor thin film is formed using a sputtering method.

SOLUTION: The oxide sintered body which is made of indium oxide whose crystal structure is substantially a bixbyite structure, has a gallium atom solid-dissolved in the indium oxide and has an atomic ratio Ga/(Ga+In) of 0.10 to 0.15, is used as a target material for sputtering.

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