| 摘要 |
<P>PROBLEM TO BE SOLVED: To measure a temperature of a semiconductor switching element with high accuracy. <P>SOLUTION: The heat generated at the semiconductor switching element 2 is transferred to a conductor layer L7 through a conductor layer L1, a base material conductor layer 4, and a conductor layer 5, and is measured with a thermistor element 3 arranged at the conductor layer L7. In short, in a power supply protection device 1, the thermistor element 3 for measuring the temperature of the semiconductor switching element 2 is arranged on the backside of the semiconductor switching element 2, and the heat generated by the semiconductor switching element 2 is transferred to the thermistor element 3 through the base material conductor layer 4 and the conductor layer 5. <P>COPYRIGHT: (C)2011,JPO&INPIT |
