| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory for testing bit-line leakage with high precision in a short time period. <P>SOLUTION: The non-volatile semiconductor memory includes: bit lines 110 and 11k extended in parallel; a sense amplifier 140 connected to one end of the bit line 110; a sense amplifier 14k connected to one end of the bit line 11k; a switch 150 that connects the sense amplifier 140 to IO lines 160-167 based on the signal input to a control terminal; a switch 15k that connects a sense amplifier 11k to the IO lines 160-167 based on the signal input to the control terminal; and address selection means 18 that generates selection signals 230-23k for selecting a bit line 140 or a bit line 14k in a normal operation mode, or selecting both the bit line 110 and the bit line 11k in test mode, and outputs the selection signals 230-23k to the control terminal of the switch 150 and the control terminal of the switch 15k. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
