| 摘要 |
PROBLEM TO BE SOLVED: To provide an improved method of forming monocrystalline germanium or silicon germanium in trenches provided in a substrate. SOLUTION: The method includes a step of preparing a substrate 1 having dielectric isolation 3 (for example, STI), a step of subjecting a substrate material 1 (for example, Si) to trench etching 4, a step of performing selective growth of a fill layer 5 (for example, Ge) in the trenches 4, and recrystallization 7 of the fill layer 5 (for example, Ge) by heating the fill layer 6 to a temperature sufficient to substantially melt the fill layer 6. COPYRIGHT: (C)2011,JPO&INPIT
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