| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus capable of quickly forming a silicon based film of high quality on a large-area substrate as a target, a method for producing a silicon based film using this apparatus, and in particular, a plasma CVD technique capable of achieving improvement in quality and quick formation of a microcrystalline silicon film, in order to achieve the improvement of productivity and the reduction of costs in the field of application of plasma CVD apparatus for producing microcrystalline silicon films of thin film silicon solar cells, passivation films of polycrystalline silicon solar cells, etc. SOLUTION: In the plasma CVD apparatus including a pair of parallel tabular electrodes, the electrode having gas injection holes is provided with concave portions and flat portions, and a plurality of material gas injection holes for injecting a material gas are disposed in the concave portions, and a plurality of diluent gas injection holes for injecting a diluent gas are disposed in the flat portions, and the diluent gas injection holes are installed so as to be turned to directions other than a normal direction of a substrate surface. COPYRIGHT: (C)2011,JPO&INPIT
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