| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which prevents oxidation of a nickel silicide layer and has an ohmic electrode provided with a proper ohmic contact. SOLUTION: A nickel layer 4 with a thickness of approximately 100 nm is formed on a main surface of a silicon layer 3 by the sputtering method, and a titanium nitride layer 5 with a thickness of 300-500 nm is formed on a main surface of the nickel layer 4 as an oxidation protective layer by the sputtering method. Then high-temperature annealing is performed at 400-700°C for five minutes to react the silicon layer 3 with the nickel layer 4 and form a nickel silicide layer 6. COPYRIGHT: (C)2011,JPO&INPIT
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