| 摘要 |
PROBLEM TO BE SOLVED: To provide a heterojunction FET that suppresses a gate leakage current and has a recess gate structure made of a nitride semiconductor, and to provide a method of manufacturing the same. SOLUTION: The heterojunction FET is made of the nitride semiconductor, and includes a semiconductor layer including a barrier layer 40 and a cap layer 50 formed on the barrier layer 40, a gate electrode 100 provided on the semiconductor layer to have its lower portion buried in the semiconductor layer, and a source electrode 80 and a drain electrode 90 provided apart on the semiconductor layer on both sides of the gate electrode 100. The cap layer 50 has a doping region 60, doped with an impurity forming an acceptor level, in a region coming into contact with at least a side face of the gate electrode 100 on the side of the drain electrode 90 at least on a top surface side. COPYRIGHT: (C)2011,JPO&INPIT
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