| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device that has excellent charge retention characteristics, and to provide a method for manufacturing the same. SOLUTION: The nonvolatile semiconductor memory device includes a semiconductor layer SML, a first insulating layer I1 provided opposite the semiconductor layer, a second insulating layer I2 provided between the semiconductor layer and first insulating layer, a function layer I3 provided between the first insulating layer and second insulating layer, and a first gate electrode G1 and a second gate electrode G2 provided on the first insulating layer on the side opposite from the semiconductor layer and separated from each other. A first region R1 of the function layer which faces the first gate electrode and a second region R2 of the function layer which faces the second gate electrode are different in charge storage capability from a third region R3 of the function layer which is between the first region and second region. COPYRIGHT: (C)2011,JPO&INPIT
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