发明名称 METHOD FOR FORMING IMAGE IN DEEP ULTRAVIOLET PHOTORESIST WITH TOP COAT, AND MATERIALS THEREFOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for forming an image in a deep ultraviolet photoresist with a top barrier coat to prevent the photoresist form being contaminated by environmental contaminants. <P>SOLUTION: The method is for forming the image of the deep ultraviolet photoresist by using: a top coat composition for a deep uv immersion lithography including a polymer with at least one ionizable group having a pKa ranging from about -9 to about 11; and top coat. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011145695(A) 申请公布日期 2011.07.28
申请号 JP20110050965 申请日期 2011.03.09
申请人 AZ ELECTRONIC MATERIALS USA CORP 发明人 HOULIHAN FRANCIS M;DAMMEL RALPH R;ROMANO ANDREW R;SAKAMURI RAJ
分类号 G03F7/11;G03C1/76;G03F7/00;G03F7/09;G03F7/20;H01L21/027 主分类号 G03F7/11
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