发明名称 |
METHOD FOR FORMING IMAGE IN DEEP ULTRAVIOLET PHOTORESIST WITH TOP COAT, AND MATERIALS THEREFOR |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming an image in a deep ultraviolet photoresist with a top barrier coat to prevent the photoresist form being contaminated by environmental contaminants. <P>SOLUTION: The method is for forming the image of the deep ultraviolet photoresist by using: a top coat composition for a deep uv immersion lithography including a polymer with at least one ionizable group having a pKa ranging from about -9 to about 11; and top coat. <P>COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011145695(A) |
申请公布日期 |
2011.07.28 |
申请号 |
JP20110050965 |
申请日期 |
2011.03.09 |
申请人 |
AZ ELECTRONIC MATERIALS USA CORP |
发明人 |
HOULIHAN FRANCIS M;DAMMEL RALPH R;ROMANO ANDREW R;SAKAMURI RAJ |
分类号 |
G03F7/11;G03C1/76;G03F7/00;G03F7/09;G03F7/20;H01L21/027 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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