| 摘要 |
PROBLEM TO BE SOLVED: To provide a diode in which different kinds of crystal defects coexist without using heavy metal. SOLUTION: The diode 10 comprises a semiconductor substrate 20, a cathode electrode 30 formed on a first main surface 20a of the semiconductor substrate 20, and an anode electrode 70 formed on a second main surface 20b of the semiconductor substrate 20. The semiconductor substrate 20 includes a first region 90A in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region 80A in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects. COPYRIGHT: (C)2011,JPO&INPIT |
