发明名称 Photolithography Mask, Blank Photomask, Reflective Photomask, and Methods of Manufacturing the Same
摘要 Photolithography masks include an optically transparent substrate having a plurality of fiducial position aligning marks on sidewalls thereof. A reflective layer is also provided on an upper surface of the optically transparent substrate. The reflective layer includes a composite of a lower reflective layer of a first material and an upper reflective layer of a second material different from the first material, on the lower reflective layer. The lower reflective layer may include molybdenum and the upper reflective layer may include silicon. An anti-reflective layer is provided on the reflective layer.
申请公布号 US2011183239(A1) 申请公布日期 2011.07.28
申请号 US20100963064 申请日期 2010.12.08
申请人 PARK CHANG-MIN;PARK JOO-ON;YEO JEONG-HO 发明人 PARK CHANG-MIN;PARK JOO-ON;YEO JEONG-HO
分类号 G03F1/00 主分类号 G03F1/00
代理机构 代理人
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