发明名称 |
CONTROL OF COMPOSITION PROFILES IN ANNEALED CIGS ABSORBERS |
摘要 |
Particular embodiments of the present disclosure relate to the use of sputtering, and more particularly magnetron sputtering, in forming absorber structures, and particular multilayer absorber structures, that are subsequently annealed to obtain desired composition profiles across the absorber structures for use in photovoltaic devices. |
申请公布号 |
WO2011090959(A2) |
申请公布日期 |
2011.07.28 |
申请号 |
WO2011US21611 |
申请日期 |
2011.01.19 |
申请人 |
AQT SOLAR, INC.;MUNTEANU, MARIANA, RODICA |
发明人 |
MUNTEANU, MARIANA, RODICA |
分类号 |
H01L31/18;H01L21/20;H01L31/032 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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