METHOD FOR MANUFACTURING VERTICAL LIGHT EMITTING DIODE
摘要
PURPOSE: A method for manufacturing a vertical light emitting diode is provided to quickly eliminate a part of a substrate by PEC(Photo Electro Chemical) etching and eliminate a buffer layer and a sacrificial layer by selective wet etching, thereby shortening processing time. CONSTITUTION: A sacrificial layer and an etching stopping layer are formed on a substrate(S1). A light emitting structure is formed on the etching stopping layer(S2). A first electrode layer is formed on the light emitting structure(S3). A structural support layer is formed on the first electrode layer(S4). The substrate and the sacrificial layer are selectively eliminated(S5). The lower surface of the light emitting structure is exposed by eliminating the etching stopping layer(S6). A second electrode is formed on the exposed light emitting structure(S7).
申请公布号
KR20110086348(A)
申请公布日期
2011.07.28
申请号
KR20100006030
申请日期
2010.01.22
申请人
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YEUNGNAM UNIVERSITY
发明人
OH, JI WON;PARK, IL KYU;PARK, SI HYUN;JANG, JA SOON