GAN-GROUP SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a GaN group semiconductor light-emitting element including an active layer containing In and reducing a quantum efficiency in a large injection current state, and also to provide a method for manufacturing the GaN group semiconductor light-emitting element.

SOLUTION: The GaN group semiconductor light-emitting element 11a is equipped with: a substrate 13 composed of a GaN group semiconductor and having a main surface 13a inclined from a surface (c) at an inclination angle α included in a range of not less than 63° and less than 80° in a direction of an axis (m); a GaN group semiconductor epitaxial region 15; an active layer 17; an electronic block layer 27; and a contact layer 29. The active layer 17 is composed of a GaN group semiconductor containing In, and the dislocation density of the substrate 13 is 1×107cm-2or less.

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