| 摘要 |
PROBLEM TO BE SOLVED: To improve transistor characteristics while lowering a temperature of a heat treatment. SOLUTION: A field effect transistor is manufactured through a process of forming an active layer made of an amorphous oxide semiconductor containing In, Ga and Zn whose composition ratio is denoted by In:Ga:Zn=a:b:c, a, b, c satisfying relations of a+b=2, 1.2<b<2 and 1≤c≤2, and a process of heat-treating the active layer at≤240°C. COPYRIGHT: (C)2011,JPO&INPIT |
