发明名称 PBNZT FERROELECTRIC FILM, SOL-GEL SOLUTION, FILM FORMING METHOD, AND METHOD FOR PRODUCING FERROELECTRIC FILM
摘要 Disclosed is a PBNZT ferroelectric film in which oxygen ion deficiency can be sufficiently prevented. According to one embodiment of the present invention, a PBNZT ferroelectric film is composed of a perovskite-structured ferroelectric body represented by ABO3, and the PBNZT ferroelectric film is characterized in that the perovskite-structured ferroelectric body is composed of a PZT-based ferroelectric body that contains Pb2+ ions as the A-site ions, while containing Zr4+ ions and Ti4+ ions as the B-site ions, and that Bi3+ ions are contained as A-site compensation ions in the A-site and Nb5+ ions are contained as B-site compensation ions in the B-site.
申请公布号 WO2011089748(A1) 申请公布日期 2011.07.28
申请号 WO2010JP62864 申请日期 2010.07.23
申请人 YOUTEC CO., LTD.;KIJIMA, TAKESHI;HONDA, YUUJI 发明人 KIJIMA, TAKESHI;HONDA, YUUJI
分类号 C01G33/00;H01L21/316 主分类号 C01G33/00
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