| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method by which a pattern having high sensitivity and resolution, small line width roughness (LWR), and a superior exposure latitude (EL) and pattern form is formed, to provide a pattern formed by the pattern forming method, and to provide a chemically amplified resist composition used in the pattern forming method, and a resist film formed of the chemically amplified resist composition. <P>SOLUTION: The pattern forming method includes: (1) a step of forming a film from a chemically amplified resist composition containing (A) a resin including a repeating unit having at least two hydroxyl groups, (B) a compound generating an acid by the irradiation with an active ray or radiation, (C) a cross-linking agent, and (D) a solvent; (2) a step of exposing the film, and (3) a step of developing by using a developing solution containing an organic solvent. A pattern is formed by the pattern forming method. The chemically amplified resist composition is used in the pattern forming method, and the resist is formed from the chemically amplified resist composition. <P>COPYRIGHT: (C)2011,JPO&INPIT |
