| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a detection device which is proper in cost performance, attains a high manufacturing yield and prevents short-circuitings or connection failures (open state) in pixels. <P>SOLUTION: The detection device includes a light-receiving element array 50, a CMOS 70, junction bumps 9 intervened between them, and a connection member 21 for connecting the light-receiving array and ground electrodes 12, 72 of the CMOS to each other. The ground electrode 12 of the light-receiving element is in ohmic contact with a compound semiconductor layer 2, which forms the bottom surface of a stage in an outside 47 of a pixel region 45. The connecting member 21 is erect with respect to the ground electrode 12 of the light-receiving element array and to the ground electrode 72 of the CMOS. <P>COPYRIGHT: (C)2011,JPO&INPIT |
