| 摘要 |
A variable resistance nonvolatile memory device (100) according to an aspect of the present invention includes: a plurality of memory cells (M11, M12, M21, M22) in each of which a variable resistance element (R11, R12, R21, R22) and a current steering element (D11, D12, D21, D22) having two terminals are connected in series; a current limit circuit (105b) which limits a first current flowing in a direction for changing the memory cells (M11, M12, M21, M22) to a low resistance state; and a boost circuit (105d) which increases, when one of the memory cells (M11, M12, M21, M22) changes to the low resistance state, the first current in a first period before the memory cell changes to the low resistance state.
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