发明名称 LASER DRILLING OF VIAS IN BACK CONTACT SOLAR CELLS
摘要 Embodiments of the invention relate to methods and apparatus for laser drilling holes in a silicon substrate during the fabrication of back contact solar cells, such as emitter-wrap-through (EWT) solar cells. In one embodiment, the method and apparatus use a short focal length flat field lens and a dynamic scanning technique to accomplish single pulse drilling in the silicon substrate. The method and apparatus result in increased speed and quality of holes in an EWT solar cell substrate as compared to conventional apparatus and processes.
申请公布号 WO2011035153(A3) 申请公布日期 2011.07.28
申请号 WO2010US49329 申请日期 2010.09.17
申请人 APPLIED MATERIALS, INC.;FRANKLIN, JEFF;GEE, JAMES M. 发明人 FRANKLIN, JEFF;GEE, JAMES M.
分类号 H01L31/18;B23K26/36;H01L31/042 主分类号 H01L31/18
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