发明名称 CHARGE STORAGE NODES WITH CONDUCTIVE NANODOTS
摘要 Memory cells formed to include a charge storage node having conductive nanodots over a charge storage material are useful in non-volatile memory devices and electronic systems.
申请公布号 US2011180865(A1) 申请公布日期 2011.07.28
申请号 US20100693062 申请日期 2010.01.25
申请人 MICRON TECHNOLOGY, INC. 发明人 RAMASWAMY NIRMAL
分类号 H01L29/792;H01L21/336 主分类号 H01L29/792
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